1 Ocak 1999 Dergi makalesi Açık Erişim

Agayeva, A; Salmanov, V; Gousseynov, E; Samedov, S

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{
  "@context": "https://schema.org/", 
  "@id": 104063, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "name": "Agayeva, A"
    }, 
    {
      "@type": "Person", 
      "name": "Salmanov, V"
    }, 
    {
      "@type": "Person", 
      "name": "Gousseynov, E"
    }, 
    {
      "@type": "Person", 
      "name": "Samedov, S"
    }
  ], 
  "datePublished": "1999-01-01", 
  "description": "A design of an attenuator for IR laser radiation and the method for its manufacturing are described. The device is based on the electric-field-induced shift of the optical absorption edge of indium selenide crystals. It is shown that InSe with a resistivity of 0,2-200 Omega cm and applied electric field of 10(2) V/cm reduces the intensity of YAG:Nd+3 laser radiation (lambda = 1,06 mu m, pulse duration of 10 ns and power of 10 MW) by more than two orders of magnitude. The physical mechanism of the anomalous large shift of the absorption edge is given. The device can also be efficiently used as a cut-off filter for near IR range of spectrum.", 
  "headline": "Electric-field-controlled attenuator for near IR laser radiation", 
  "identifier": 104063, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Electric-field-controlled attenuator for near IR laser radiation", 
  "url": "https://aperta.ulakbim.gov.tr/record/104063"
}