1 Ocak 1993 Dergi makalesi Açık Erişim

OZTURK, ZZ; EBEOGLU, MA

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/102731</identifier>
  <creators>
    <creator>
      <creatorName>OZTURK, ZZ</creatorName>
      <givenName>ZZ</givenName>
      <familyName>OZTURK</familyName>
    </creator>
    <creator>
      <creatorName>EBEOGLU, MA</creatorName>
      <givenName>MA</givenName>
      <familyName>EBEOGLU</familyName>
    </creator>
  </creators>
  <titles>
    <title>Study On Interface Properties Of Gaas/Ao/Al Structures Using The Thermally Stimulated Current (Tsc) Method</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>1993</publicationYear>
  <dates>
    <date dateType="Issued">1993-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/102731</alternateIdentifier>
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    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.81043/aperta.102730</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.81043/aperta.102731</relatedIdentifier>
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  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
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  <descriptions>
    <description descriptionType="Abstract">Interface properties of GaAs/anodic oxide (AO)/Al structures with various anodic oxide films which are grown by using different electrolytes under constant current conditions are studied. The C-U, I-U, and thermally stimulated current measurements for these devices are carried out at various temperatures. Trap energy levels which are determined from TSC measurements indicate that there are As(Ga) antisite and probably As interstitial-type defects at the interface depending on the preparation techniques.</description>
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