1 Ocak 2015 Konferans bildirisi Açık Erişim

Mert, Yakup Murat; Simsek, Osman Seckin

DataCite XML

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/100293</identifier>
  <creators>
    <creator>
      <creatorName>Mert, Yakup Murat</creatorName>
      <givenName>Yakup Murat</givenName>
      <familyName>Mert</familyName>
      <affiliation>TUBITAK ILTAREN, Umit Mah, TR-06800 Ankara, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Simsek, Osman Seckin</creatorName>
      <givenName>Osman Seckin</givenName>
      <familyName>Simsek</familyName>
      <affiliation>METU, Ankara, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Employing Dynamic Body-Bias For Short Circuit Power Reduction In Srams</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2015</publicationYear>
  <dates>
    <date dateType="Issued">2015-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Conference paper</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/100293</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.81043/aperta.100292</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.81043/aperta.100293</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">Dynamic body-biasing is a well studied approach for reducing the leakage power in memory systems. Proposed designs dynamically change the body bias of the inactive memory cells in order to tune their threshold voltages. However, prior body biasing schemes only focus on the static power reduction and overlook the power dissipation stemmed from the short circuit current. Recent studies showed that the neglected short circuit power became significant fraction of the overall power consumption in CMOS circuits. On the other hand, conventional short circuit power optimization techniques are not appropriate for the memory cells due to the area and performance constraints. In this study, we propose a supplementary body biasing scheme to address the short circuit current issue of the SRAM cells. We contend that the technique can easily be adapted to many former body-bias schemes and enables significant short circuit current reduction with slight performance impact.</description>
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