Published January 1, 2014
| Version v1
Conference paper
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A Comparison of GaN, Si and GaAs Power Amplifiers
- 1. Tubitak Bilgem, RF Sistemleri Birimi, Kocaeli, Turkey
- 2. Beykent Univ, Elekt & Haberlesme Muhendisligi Bolumu, Istanbul, Turkey
Description
Power amplifiers (PAs) are used in the wide range of electronics such as RADAR, base stations, jammers and cable TV applications. These amplifiers can achieve design specifications like high efficiency and high output power (>20W) as much as the capability of the transistor. For this reason; Si LDMOSFETs, GaN HEMTs and GaAs HFETs are advancing their place in the market. In this article; GaN, Si, and GaAs power transistor technologies will be compared and an assessment will be made about which one is leading the market by 2014.
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