IR-detectors based on IN2O3-anode oxide-CDxHg1-xTe

High sensitive IR detectors were developed by using noncompensated CdxHg1-xTe (x=0.25divided by0.3) with the field-effect electrode from InxO3, which were received by magnetron spattering onto the anodized surface of the single crystal. Photoelectric properties (spectral distribution of the photoconductivity, time-response, the uniformity of the spatial distribution of sensitivity) were investigated under different potential applied to the field-effect electrode. For high sensitive material the detectivity D* = 8.10(11) cm Hz(1/2) W-1 was obtained at the wavelength of 5 mum in the aperture angle of 30degrees. It was shown that the semitransparent field-effect electrode made from In2O3 allows to rule the output parameters of the detector in a wide range.