Yayınlanmış 1 Ocak 2018
| Sürüm v1
Konferans bildirisi
Açık
Electrical Characterization of HfO2 Based Resistive RAM Devices Having Different Bottom Electrode Metallizations
Oluşturanlar
- 1. TUBITAK BILGEM Informat & Informat Secur Res Ctr, Kocaeli, Turkey
- 2. CEA LETI, 17 Ave Martyrs, F-38054 Grenoble, France
Açıklama
HfO2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, having four different bottom electrode materials fabricated by CEA-LETI and ASM cooperation. The effects of bottom electrode metallization on Forming, switching and capacitive characteristics were studied and most efficient combinations were determined among these structures. It was observed that devices having atomic layer deposited (ALD) bottom electrode have some capacitive properties. Also TiN and TiWN bottom electrodes indicate promising switching characteristics and low operation voltages among others.
Dosyalar
bib-313769ea-502e-4ecc-9111-f3de1453d4be.txt
Dosyalar
(289 Bytes)
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