Yayınlanmış 1 Ocak 2010
| Sürüm v1
Dergi makalesi
Açık
Investigation of crystalline structure defects in high-resistance monocrystals of gallium selenide
Oluşturanlar
- 1. TUBITAK, Mat Inst, Marmare Res Ctr, Gebze, Turkey
- 2. Inst Mat Res & Appl Sci, Vilnius, Lithuania
- 3. Natl Acad Sci Belarus, Inst Tech Acoust, Vitebsk, BELARUS
- 4. Azarbaijan Acad Sci, Insitute Phys, Baku, Azerbaijan
- 5. Belarusian State Univ, Dept Energy Phys, Minsk, BELARUS
Açıklama
The trapping centres in epsilon-GaSe single crystals have been investigated by photo-induced current transient spectroscopy (PICTS). Five traps have been detected and their parameters are presented. It has been demonstrated that photo-induced depolarization oh the sample after processing in the frame of DLTS procedure could be used for determination of the traps parameters. The parameters of trap A(5) obtained from PICTS and photo-induced depolarization relaxation are in close agreement.
Dosyalar
bib-3492f298-ca37-4704-b7bc-362df66cd70b.txt
Dosyalar
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