DETERMINATION OF Ge PHOTODIODE BASED NEAR INFRARED DETECTION ELEMENT'S OPTICAL RESPONSIVITY

Quantum detectors made from single photodiodes have both polarization dependency and high front surface reflectance looses, which results in low external quantum efficiency and also instability in the responsivity. These effects can be overcame with a special detectors made from combinations of photodiodes on a skeleton in such a configuration trapping the reflected beams. Hence, this work describes both construction of Near Infrared (NIR) optical detection element, made from a skeleton and three large area (10 mm x 10 mm) windowless Germanium (Ge) photodiodes, and also determination of its responsivity scale. The responsivity scale was traced to primary systems at laser wavelengths via improved laser stabilization optics and electrical substitution cryogenic radiometer system. Moreover, it was expanded to other wavelengths in its active range by using physical models developed for the reflectance and quantum efficiency.