Yayınlanmış 1 Ocak 2013
| Sürüm v1
Dergi makalesi
Açık
3.5-3.8 GHz class-E balanced GaN HEMT power amplifier with 20 W Pout and 80% PAE
- 1. Turkey Tubitak Bilgem, Sci & Technol Res Council, TR-41470 Gebze, Turkey
- 2. Istanbul Tech Univ, Dept Elect Elect Engn, TR-34469 Istanbul, Turkey
- 3. Istanbul Univ, Dept Elect Elect Engn, TR-34452 Istanbul, Turkey
Açıklama
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5-3.8 GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254 mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20 W (43 dBm) output power with 80% peak power added efficiency (PAE) and shows a very favorable combination of output power, PAE and suppressed even order harmonics compared to the single ended class-E PA prototype.
Dosyalar
bib-00197827-5e6e-4b8f-9312-1a62c29d7180.txt
Dosyalar
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