Yayınlanmış 1 Ocak 2012
| Sürüm v1
Dergi makalesi
Açık
Integrated AlGaN quadruple-band ultraviolet photodetectors
- 1. Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey
- 2. Inst Elect Mat Technol, PL-01919 Warsaw, Poland
Açıklama
Monolithically integrated quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated on each of two different AlxGa1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15 nm for sample A, which incorporated five 1000 nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500 nm thick epitaxial layers.
Dosyalar
bib-18878e08-a3a8-45e8-88e4-15aab0c7873e.txt
Dosyalar
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