Preparation and characterization of CdSe, ZnSe and CuSe thin films deposited by the successive ionic layer adsorption and reaction method

In this study, the CdSe, ZnSe and CuSe thin films have been directly formed on n-type Si by means of Succesive Ionic Layer Adsorption and Reaction (SILAR) method, at room temperature. The filmswere characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX). The SEM and XRD studies showed that films covered well n-type Si substrates and exhibit polycrystalline phase. The EDAX spectra showed that the expected elements exist in the thin films. Some of the thin film with equal distribution of grains, mostly falling in nanometer regime, was clearly seen. Additionally, Cd/CdSe/n-Si/Au-Sb, Zn/ZnSe/n-Si/Au-Sb and Cu/CuSe/n-Si/Au-Sb structures are prepared by the SILAR method at room temperature. The characteristics parameters such as ideality factor (n), barrier height (Phi(b)) and saturation current (l(o)) are obtained from current- voltage (I-V) measurement by applying a thermionic emission theory. According to the optical and electrical characterizations, in the future, these can be used for solar-cell studies, rectifying contacts, integrated circuits, other electronic devices and so on.