Analytic model for ZnO-thin film transistor under dark and UV illumination

A ZnO thin film transistor (TFT) was fabricated on a SiO2/Si substrate by sol-gel method. Electrical characteristics of the zinc oxide transistor under various illuminations were analyzed. We have developed a method to extract the TFT parameters under dark and under UV illuminations. This component requires an ohmic source and drain contacts for ideal operation. The performance of electronic-device is often limited by injection. In many real situations, the injection of charge carriers from metals into semiconductors is non-linear. This paper deals with the effects of non-ohmic contacts on the modeling of ZnO thin film transistor and gives specific rules on how to extract the real transistor parameters using only electrical measurements under dark and illumination.