Published January 1, 2015 | Version v1
Journal article Open

Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films

  • 1. Northwestern Univ, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA
  • 2. Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
  • 3. Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

Description

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from similar to 90% to similar to 30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics and sensing.

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