Published January 1, 2015
| Version v1
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Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles
Creators
- 1. Bilkent Univ, Inst Mat Sci & Nanotechnol UNAM, TR-06800 Ankara, Turkey
- 2. Masdar Inst Sci & Technol, Dept Elect Engn & Comp Sci EECS, Inst Ctr Future Energy Syst iFES, Abu Dhabi 54224, U Arab Emirates
- 3. Marmara Univ, Dept Phys, TR-34722 Istanbul, Turkey
- 4. Georgia State Univ, Dept Phys, Atlanta, GA 30303 USA
- 5. Istanbul Tech Univ, Dept Engn Phys, TR-34469 Istanbul, Turkey
- 6. Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey
Description
In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Delta eta) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300-1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps.
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