Yayınlanmış 1 Ocak 2015
| Sürüm v1
Dergi makalesi
Açık
Examination of the temperature related structural defects of InGaN/GaN solar cells
Oluşturanlar
- 1. Gazi Univ, Life Sci Res & Applicat Ctr, Ankara, Turkey
- 2. Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey
- 3. Natl Boron Res Inst, TR-06520 Ankara, Turkey
- 4. Kirklareli Univ, Fac Technol, Energy Syst Engn Dept, Kirklareli, Turkey
- 5. Gazi Univ, Photon Res Ctr, Ankara, Turkey
- 6. Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey
Açıklama
In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution X-ray Diffraction (HRXRD) and an Atomic Force Microscope (AFM). The plane angles, mosaic crystal sizes, mixed stress, dislocation intensities of the structure of the GaN and InGaN layers are determined. According to the test results, there are no general characteristic trends observed due to temperature at both structures. There are fluctuating failures determined at both structures as of 350 degrees C. The defect density increased on the GaN layer starting from 350 degrees C and reaching above 400 degrees C. A similar trend is observed on the InGaN layer, too. (C) 2015 Elsevier Ltd. All rights reserved.
Dosyalar
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Dosyalar
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