Temperature dependent electrical properties of Cd/CdS/n-Si/Au-Sb structures

The temperature dependent electrical properties of Cd/CdS/n-Si/Au-Sb structure were investigated using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics in the temperature range of 80-300 K. The main electrical parameters, such as ideality factor (n) and zero-bias barrier height (Phi(b0)) determined from the forward bias I-V characteristics were found strongly dependent on temperature and When the Phi(b0) increased, the n decreased with increasing temperature. This behaviors are attributed to the assumption of a Gaussian distribution of barrier heights and barrier inhomogenities that dominance at the metal-semiconductor interface. The C-V plots give a peak especially at high temperatures in the depletion region and when the temperature was increased both the values of C and G/w decreased. These behaviors are mainly attributed to the molecular restructuring and reordering of the interface states and series resistance. The value of series resistance (R-S) and the interface state density distribution (N-SS) were determined from the C-V and G/w-V characteristics The change in R-S with temperature may be explained by the lack of free charge carriers. Also, the barrier height and carrier concentration were calculated from reverse bias C-2-V characteristics at 500 kHz frequency with increasing temperature. (C) 2014 Elsevier Ltd. All rights reserved.