Yayınlanmış 1 Ocak 2019
| Sürüm v1
Dergi makalesi
Açık
AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn
Oluşturanlar
- 1. Sivas Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
- 2. Ataturk Univ, Dept Phys, Fac Sci, TR-25250 Erzurum, Turkey
- 3. Ataturk Univ, East Anatolia High Technol Applicat & Res Ctr, TR-25240 Erzurum, Turkey
- 4. Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA
Açıklama
We report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed codoping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.
Dosyalar
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Dosyalar
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