Published January 1, 2019
| Version v1
Conference paper
Open
Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
Creators
- 1. Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey
Description
A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.
Files
bib-0a9b1f41-4530-4320-b96e-58657552a1f9.txt
Files
(208 Bytes)
| Name | Size | Download all |
|---|---|---|
|
md5:423d1b7af4b50d13ab23f128ed95ff5f
|
208 Bytes | Preview Download |