Yayınlanmış 1 Ocak 2019
| Sürüm v1
Dergi makalesi
Açık
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
Oluşturanlar
- 1. Bilkent Univ, Adv Res Labs, TR-06800 Ankara, Turkey
- 2. Cumhuriyet Univ, Nanotechnol Res Ctr, TR-58140 Sivas, Turkey
- 3. Ermaksan AS, Optoelect R&D Ctr, TR-16065 Bursa, Turkey
- 4. Bilken Univ, Dept Phys, TR-06800 Ankara, Turkey
- 5. Ataturk Univ, Dept Phys, TR-25240 Erzurum, Turkey
- 6. Uludag Univ, Elect & Elect Engn Dept, TR-16059 Bursa, Turkey
Açıklama
This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.
Dosyalar
bib-933f26f2-c0ce-413b-9ab8-bc41ce5d88b3.txt
Dosyalar
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