Published January 1, 2014 | Version v1
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Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors

  • 1. Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey
  • 2. Anadolu Univ, Fac Sci, Dept Phys, TR-26470 Eskisehir, Turkey

Description

In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of the zero-bias offsets were studied on mesa structures shaped in different diameters. Furthermore, effect of mesa diameter on J-V characteristics was investigated. The temperature, initial bias voltage and voltage sweep rate dependence of the zero-bias offsets were explained by a qualitative model, which is based on a RC equivalent circuit of the quantum well infrared photodetector. (C) 2014 Elsevier B.V. All rights reserved.

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