Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities

Electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode were investigated under various illumination intensities. Field emission scanning electron microscope micrographs of the interfacial polymer layer were provided for verification of the nano-fibre pattern. The current-voltage (I-V) measurements of the diode in the dark and under various illumination intensities (50-250 mW/cm(2)) were carried out and the main electrical parameters of the diode such as leakage current (I-0), ideality factor (n), zero-bias barrier height (phi(B0)), series and shunt resistance (R-s and R-sh), density of surface states (N-ss), open circuit voltage (V-oc) and short-circuit current (I-sc) were obtained in these conditions.