Yayınlanmış 1 Ocak 2016
| Sürüm v1
Dergi makalesi
Açık
Nanosegregated amorphous AlBN2 alloy
Oluşturanlar
- 1. Abdullah Gul Univ, Dept Mat Sci & Nanotechnol Engn, Kayseri, Turkey
Açıklama
We use ab initio molecular dynamics simulations to create an amorphous AlBN2 model and find that it consists of nanosegregated two-dimensional hexagonal BN-like and tetrahedral AlN-like domains. These domains are somewhat homogenously distributed in the network. There exist no chemical disorder and Al-B bonding. Amorphous AlBN2 is a semiconductor having a theoretical band gap energy of approximate to 2.24eV, larger than that of amorphous AlN and BN systems. This amorphous nitride might find some applications as an electronic material.
Dosyalar
bib-20175344-b3e0-4ee2-bf05-37f57a36b777.txt
Dosyalar
(103 Bytes)
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