Published January 1, 2016
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Optical characterization of Cu2ZnSnSe4-xSx nanocrystals thin film
- 1. Selcuk Univ, Dept Phys, Fac Sci, TR-42075 Konya, Turkey
- 2. Karamanoglu Mehmetbey Univ, Dept Mat Sci & Engn, Fac Engn, TR-70200 Karaman, Turkey
- 3. Giresun Univ, Fac Engn, Dept Energy Syst Engn, TR-28200 Giresun, Turkey
Description
Cu2ZnSnSe4-xSx (CZTSeS) nanocrystals have been shown to be a potential application for sustainable thin-film solar cell devices. In this paper, we have presented the growth of nanocrystals CZTSeS and their thin films applications successfully prepared on soda-lime glass substrates by using spin coating techniques. The CZTSeS nanocrystals have been synthesized by hot-injection method. In-depth characterization has indicated that pure stoichiometric CZTSeS nanocrystals with an average particle size mostly distributed between 15 and 20 nm have been formed. We have analyzed the optical transmission and reflection spectra of nanocrystal CZTSeS thin film. Optical band gap E-g and absorption coefficient (a) of thin film have been determined by standard optical analysis and also several optical parameters such as refractive index (n), extinction coefficient (k), the Urbach energy (E-U) and real and imaginary parts of dielectric constant (epsilon) have been calculated. Detailed characterization data including X-ray diffraction, surface morphology, cross section analysis, optical transmittance and reflectance spectroscopy have been presented in order to use in the performance of single-junction solar devices. Optical measurements have showed a band gap of 1.51 eV, which is optimal for a single-junction solar device. (C) 2016 Elsevier B.V. All rights reserved.
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