Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD

In this study, we report the growth studies of InGaAs/InAlAs superlattices (SLs) with thin layer thicknesses which will be used for quantum cascade laser (QCL) structures, grown by Metal Organic Chemical Vapor Deposition (MOCVD) technique. We utilize high resolution X-ray diffraction (HRXRD) to determine the single layer thickness and period thicknesses of SLs. Measurement results show that by establishing very low growth rates (similar to 0,1 nm/s), the single thin layers and SLs can be grown well by MOCVD in a controllable and repeatable way with high crystalline and interface quality.