Published January 1, 2017
| Version v1
Conference paper
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A low power CMOS readout IC design for bolometer applications
Creators
- 1. Sabanci Univ, Fac Engn & Nat Sci, TR-34956 Istanbul, Turkey
- 2. IHP Microelect, D-15236 Frankfurt, Oder, Germany
Description
A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (>= 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 mu m(2) pixel sizes in development. The prototype has been designed and fabricated in 0.25 mu m SiGe: C BiCMOS process.
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