Yayınlanmış 1 Ocak 2017
| Sürüm v1
Dergi makalesi
Açık
V/III ratio effects on high quality InAlAs for quantum cascade laser structures
Oluşturanlar
- 1. Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
Açıklama
In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown In(x)A(1-x)As layers, a part of Quantum Cascade Laser (QCL) structures, on InP substrate. Especially photoluminescence (PL) properties of InAlAs-InP interface show strong dependence on AsH3 overpressure. We have shown that the VIII ratio with fixed metalorganic precursor flow is a crucial parameter on In In(x)A(1-x)As layers to have a good material quality in terms of crystallinity, optical and electrical characteristics with and without doping. (C) 2017 Elsevier Ltd. All rights reserved.
Dosyalar
bib-5a3d692c-cf10-43f6-bf0c-6db2b924bff3.txt
Dosyalar
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