Published January 1, 2017
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V/III ratio effects on high quality InAlAs for quantum cascade laser structures
Creators
- 1. Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
Description
In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown In(x)A(1-x)As layers, a part of Quantum Cascade Laser (QCL) structures, on InP substrate. Especially photoluminescence (PL) properties of InAlAs-InP interface show strong dependence on AsH3 overpressure. We have shown that the VIII ratio with fixed metalorganic precursor flow is a crucial parameter on In In(x)A(1-x)As layers to have a good material quality in terms of crystallinity, optical and electrical characteristics with and without doping. (C) 2017 Elsevier Ltd. All rights reserved.
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