Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si

A detailed comparative theoretical analysis on both carrier and photon confinement of dilute nitride direct bandgap GaNxAs1-x-yPy with that of GaAs1-yPy on Si substrates is presented. Model calculations indicate that optical confinement factor of GaAs1-yPy/GaP is greater than that of GaNxAs1-x-yPy/GaP for all concentrations. We have demonstrated that one can improve the optical confinement factor of GaNxAs1-x-yPy/GaP by using an AlzGa1-zP cladding layer.