Heteroepitaxial growth of thin InAs layers on GaAS(100) misoriented substrates: A structural and morphological comparison

Thin InAs epilayers were grown on GaAs(100) substrates exactly oriented and misoriented toward [111]A direction by atmospheric pressure metalorganic vapor phase epitaxy. InAs growth was monitored by in situ spectral reflectivity. Structural quality of InAs layers were studied by using high-resolution X-ray diffraction. No crystallographic tilting of the layers with respect to any kind of these substrates was found for all thicknesses. This result is discussed in terms of In-rich growth environment. InAS layers grown on 2 degrees misoriented substrate provide an improved crystalline quality. Surface roughness of InAs layers depend on layer thickness and substrate misorientation. (C) 2009 Elsevier B.V. All rights reserved.