Photocurrent measurements in operating a-Si : H p-i-n solar cells with different p-layer conditions

I-V characteristics, light intensity- and modulation frequency- dependences, and spectral distributions of photocurrent of three-types of a-Si:H p-i-n devices with different p-layer conditions (baseline, thinner and thicker) have been measured at room temperature. Dc and chopped light from a HeNe laser were used for excitation. From the results, the fill-factor, quantum efficiency, carrier lifetime, and the exponent v in the power-low relationship, I-ph similar to G(v) between photocurrent and generation rate were obtained and compared under different bias conditions and modulation frequencies. The results were interpreted suitably due to radiation loss and recombination mechanisms.