Published January 1, 2009
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Luminescence properties of Tb implanted ZnO
- 1. Celal Bayar Univ, Fac Arts & Sci, Dept Phys, TR-45140 Muradiye Manisa, Turkey
- 2. Ege Univ, Fac Sci, Dept Phys, TR-35100 Bornova, Turkey
- 3. Univ Sussex, Brighton BN1 9QH, E Sussex, England
Description
ZnO [0 0 0 1] crystals were irradiated at room temperature with Tb+ ions of 400 keV with fluences from 1 x 10(16) to 2 x 10(17) cm(-2). The implanted layer was examined by several methods, including radioluminescence (RL), Rutherford backscattering spectrometry (RBS) and optical spectroscopy. The optical extinction spectra were simulated using Mie scattering theory. Absorption spectra predicted by Mie theory for particles of decreasing diameter were compared with those obtained experimentally. Some qualitative agreement between theoretical and experimental data was achieved. It was also shown that the intensities of the characteristic green emission bands associated with Tb produced by D-5(4) -> F-7(j=5,4) transitions have increased about 8 times after annealing. Optical spectroscopy and radioluminescence data have revealed that the ion implantation is a promising tool for synthesizing Tb nanoparticles in the ZnO surface. The Tb nanoparticles exhibit a rather weak plasma resonance. (C) 2009 Elsevier B.V. All rights reserved.
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