Yayınlanmış 1 Ocak 2009
| Sürüm v1
Dergi makalesi
Açık
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
Oluşturanlar
- 1. Univ Essex, Dept Comp & Elect Syst, Colchester CO4 3SQ, Essex, England
- 2. Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
- 3. Ahi Evran Univ, Fac Sci & Arts, Dept Phys, TR-40040 Kirsehir, Turkey
- 4. Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey
- 5. Gazi Univ, Dept Phys, TR-06500 Ankara, Turkey
Açıklama
This work describes Shubnikov-de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3120782]
Dosyalar
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Dosyalar
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