Near-UV InGaN/GaN-based dual-operation quantum optoelectronic devices

We present a novel dual-operation InGaN/GaN based quantum optoelectronic device (QOD) that operates as a quantum electroabsorption modulator in reverse bias and as a light emitter in forward bias in the spectral range of near-ultraviolet (UV). Here we report the design, epitaxial growth, fabrication, and characterization of such QODs that incorporate similar to 2-3 nm thick InGaN/GaN quantum structures for operation between 380 run and 400 rim. In reverse bias, our QODs show an optical absorption coefficient change of similar to 14000 cm(-1) with a reverse bias of 9 V (corresponding to similar to 40 cm(-1) absorption coefficient change for 1 V/mu m field swing) at 385 nm, reported for the first time for InGaN/GaN quantum structures in the near-UV range. In forward bias, though, our QODs exhibit optical electroluminescence spectrum centered around 383 nm with a full width at half maximum of 20 nm and photoluminescence spectrum centered around 370 nm with a full width at half maximum of 12 nm. This dual operation makes such quantum optoelectronic devices find a wide range of optoelectronics applications both as an electroabsorption modulator and a light emitting diode (LED).