Characteristic properties of indium selenide thin films grown by the successive ionic layer adsorption and reaction method

Indium selenide thin films were grown by using Successive Ionic Layer Adsorption and Reaction method at room temperature. The band gaps of the films were determined by using optical absorption measurements which were carried out in the temperature range 10-320 K. Influence of the increased cationic precursor's concentration on optical properties of the films was investigated in terms of absorption curves. The films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) for crystallographic and surface morphological properties. The electrical characterizations of the films were done by two probe method which was carded out in the temperature range 300-450 K. By using hot probe method the type of electrical conductivity was determined as n-type.