Synthesis and photoluminescence properties of Ga-doped ZnO nanorods by a low temperature solution method

Gallium doped ZnO nanorods exhibiting good PL performance were grown via a solution method. The as-grown, Ga-doped, and undoped ZnO nanorods displayed a broad yellow-orange emission and a UV emission peak, respectively. By applying an annealing process, the broad yellow-orange emission almost disappeared and the UV emission increased significantly (for ZnO:Ga (1.2%) peak intensity ratio congruent to 56). With Ga doping, the UV emission peak shifted from 3.27 eV to 3.28 eV. Also, experimental results revealed that a sample doped with Ga at 1.2% by mass exhibited a stronger PL intensity than either the undoped ZnO (higher by 57% acc. to peak intensities) sample or a ZnO sample doped with Ga at 2% (higher by 88% acc. to peak intensities). Both doped and undoped samples were also tested as alpha particle scintillators, and similarly the ZnO:Ga (1.2%) nanorods were found to have higher scintillation response than ZnO:Ga (2%) or undoped ZnO.