DETERMINATION OPTIMUM Ni CONCENTRATION IN Zn2SnO4/Ni-DOPED Sb2S3 THIN FILMS WITH DIFFERENT Ni CONCENTRATIONS USING INCIDENT PHOTONS TO CURRENT EFFICIENCY (IPCE) AND CURRENT DENSITY (J) - VOLTAGE (V) MEASUREMENTS

In this present study, Ni-doped Sb2S3 thin films with different Ni concentrations were synthesized on Zn(2)Sna(4) coated with FTO conductive glasses by CBD method at room temperature using Ni as the dopant material. The concentration of Ni to be doped during the experiment was determined as 0.25%, 0.5%, 0.75%, and 1%. In the first stage of this study, incident photons to current efficiency (IPCE) and current density (J) - voltage (V) measurements were conducted to investigate the photovoltaic properties of Zn(2)Sna(4)/Nidoped Sb2S3 thin films with different Ni concentrations for the first time. The main reason for performing IPCE and J-V measurements is to determine Ni-doped Sb2S3 thin film with optimum Ni concentration with the best solar cell performance. It was found that Sb2S3: Ni(0.75%) thin film has the highest IPCE (%) and power conversion efficiency values compare to other Ni concentrations.