Published January 1, 2018
| Version v1
Conference paper
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Investigation of Turn-on and Turn-off Characteristics
Creators
- 1. Middle East Tech Univ, Univ Mahallesi,Dumlupinar Bulvari 1, Ankara, Turkey
Description
In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are investigated. An analytical model is developed to analyze the current-voltage characteristics of the device during switching transients both with and without the effects of parasitic components. In addition, the effect of the temperature and circuit parameters on the switching characteristics are investigated.
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