Published January 1, 2018
| Version v1
Journal article
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High Performance Thermistor Based on Si1-xGex/Si Multi Quantum Wells
Creators
- 1. IHP, D-15236 Frankfurt, Oder, Germany
- 2. Sabanci Univ, TR-34956 Tuzla Istanbul, Turkey
Description
This letter represents a prototype of an intrinsic thermistor based on silicon-germanium/silicon (Si1-xGex/Si) multi quantum wells with varying Ge concentration in SiGe wells. Experimental results of the thermistor prototype are provided in terms of temperature coefficient of resistance (TCR) and noise constant (K-1/f). The prototype with 50% Ge in SiGe wells exhibited an outstanding TCR of -5.5 %/K accompanied by a K-1/f of 5.8 x 10(-13) for 25 mu m x 25 mu m and 3.4 x 10(-15) for 200 mu m x 200 mu m pixel size, showing the concurrent achievement of a very high TCR and a low 1/f noise performance.
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