Published January 1, 2018
| Version v1
Journal article
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InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
Creators
- 1. Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey
- 2. Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
- 3. Virginia Commonwealth Univ, Sch Engn, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA
Description
We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved.
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