Electrical properties, conduction mechanisms, and voltage dependent curves of interface traps, series resistance in Au/(Sn:Fe₂O₃)/n-Si structures using impedance measurements

In this work, electrical properties in the constructed Au/(Sn:Fe2O3)/n-Si (MIS/MOS) structures have been analyzed using impedance-spectroscopy model (ISM) in wide range frequency and voltage to get more accuracy and reliable results on the electrical parameters, interface traps (Nss or Dit) and conduction mechanisms. The doping donor-atoms (Nd), diffusion-potential (Vd), barrier-height (Phi b), depletion layer width (WD) was calculated from the slope/intercept of the C-2-V plots for various frequencies. The Nss and their life/relaxation times (tau) versus voltage profiles was extracted from conductance technique. The observed some changes in these-parameters were explained by the interlayer, Rs, Nss polarization. However, while the Nss and Maxwell-Wegner polarization are usually dominate in inversion and depletion zones at lower-frequencies, Rs and interlayer dominate only at accumulation zone at higher-frequencies. The Rs vs V curves for various frequency were also extracted from the Nicollian & Brews technique. The obtained results are indicated that the interlayer, Nss, and polarization are more dominate on the ISM which is considering in calculation of electrical features.