Industrial PERC Solar Cells with Fully Passivated Rear Contact Enabled by Local Hole-Selective MoO_<i>x</i>/Ag

Thin films of hole-selective molybdenum oxide (MoO x ) offer the possibility of realizing efficient crystalline silicon (c-Si) solar cells. This study presents the feasibility of utilizing local MoO x with silver (Ag) at the rear of industrial passivated emitter and rear contact (PERC) solar cells. MoO x thin films with different thicknesses were deposited by thermal evaporation at room temperature. MoO x exhibits a large work function inducing strong accumulation at the interface with p-type c-Si, which allows only holes to transport and simultaneously suppress the contact resistivity (rho c) and interfacial recombination current density (J 0). State-of-the-art industrial fabrication tools and processing steps were utilized to realize the PERC/MoO x solar cells. The best device performance was attained by 5 nm MoO x , demonstrating a remarkably high efficiency (eta) exceeding 21.5% on 225 cm2 solar cells with an impressive V oc of 672.3 mV, J sc of 39.7 mA/cm2, and FF of 80.66%. These results are recorded for MoO x on PERC solar cells prepared using industrial precursors and are expected to contribute to the development of high-efficiency solar cells with simpler fabrication methods.