Effect of Temperature on the Stability of SnSe Nanoribbons as a Channel Material for Field-Effect Transistors

Tin monoselenide (SnSe) nanoribbons, as onedimensional Sn-based channel materials, offer potential for the fabrication and development of nanotransistors. However, their fundamental properties, behavior under transistor setups, and response to temperature variations require further investigation to assess their performance. In this regard, the present study uses density functional theory (DFT) to examine the structural, electronic, and thermal properties of SnSe nanolayers as a benchmark and armchair SnSe nanoribbons as channel materials for transistors. The results indicate that SnSe monolayers are stable and possess an indirect bandgap of 1.4 eV, which limits charge transport, which agrees with previous studies. In contrast, armchair SnSe nanoribbons exhibit a direct bandgap of 0.84 eV, confirming their semiconducting nature and suitability as channel materials for nanotransistor applications. Investigation of the temperature effects in the 300 to 850 K range reveals that between 300 and 425 K, the temperature has no significant effect on the drain current, indicating reliable device performance within this range. However, between 425 and 650 K, the drain current increases linearly with rising temperature. Above 650 K, the drain current decreases with increasing temperature due to the effects of lattice vibrations.