Published January 1, 2018
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Hybrid Integration of Broadband Silicon Modulators and InGaAs Photodetectors
Description
We present on-chip integration of silicon modulators and InGaAs photodetectors via flip-chip bonding. Modulators fabricated on silicon-on-insulator (SOI) and photodetectors grown on InP wafers were fabricated independently and the hybrid integration was achieved by the deposition of indium (In) bumps on both sides.
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