High-performance selenium doped Sb2S3 based self-powered photodetectors for ultra-low light signals

In this study, highly sensitive selenium doped Sb2S3 based self-powered photodetectors were produced by using a new coating strategy in the thermal evaporation method. By controlling the amount of selenium, grain boundaries with a diameter of several micrometers were obtained. The photosensitivity of photodetectors with FTO/ TiO2/Sb2S3/P3HT/Ag structure reaches up to-2.28 x 105 values under visible light. The rise and decay times of the devices are around 0.3 s and have values below 1 s. They show sensitivity even at ultra-low light signals such as-0.1 mu W/cm2, and their specific detectivity reach up to 1014 Jones. Moreover, the photoresponsivity of these photodetectors reach very high values of 28.22 A/W. According to measurements made under blue, red and green light, the prepared devices are more sensitive to red light. The sensitivity of selenium-doped devices to red light is approximately 12 times that of undoped devices. The results obtained show that these devices can be used effectively in visible light optoelectronic applications.