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Published January 1, 2025 | Version v1
Journal article Open

A quantum resistance memristor for an intrinsically traceable International System of Units standard

Creators

  • 1. INRiM Ist Nazl Ric Metrol, Adv Mat Metrol & Life Sci Div, Turin, Italy
  • 2. Forschungszentrum Julich, Peter Grunberg Inst PGI 7, Julich, Germany
  • 3. Politecn Torino, Dept Appl Sci & Technol, Turin, Italy
  • 4. Gebze Tech Univ, Dept Phys, Kocaeli, Turkiye
  • 5. TUBITAK Natl Metrol Inst UME, Gebze, Turkiye
  • 6. INRiM Ist Nazl Ric Metrol, Quantum Metrol & Nanotechnol Div, Turin, Italy
  • 7. Inst Portugues Qualidade, Caparica, Portugal
  • 8. IMDEA Nanociencia, Madrid, Spain
  • 9. Univ Autonoma Barcelona, Dept Engn Elect, Cerdanyola Del Valles, Spain

Description

The recent revision of the International System of Units (SI)-which fixed the numerical values of nature's fundamental constants-has opened new perspectives for practical realizations of SI units. Here we demonstrate an intrinsic resistance standard based on memristive nanoionic cells that operate in air at room temperature and are directly accessible to end users. By driving these devices into the quantum conductance regime and using an electrochemical-polishing-based programming strategy, we achieved quantum conductance levels that can be exploited as intrinsic standard values. An interlaboratory comparison confirmed metrological consistency, with deviations of -3.8% and 0.6% from the agreed SI values for the fundamental quantum of conductance, G0, and 2G0, respectively. These results lay the groundwork for the implementation of national metrology institute services on chip and for the development of self-calibrating measurement systems with zero-chain traceability.

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