Investigation of multilayer β-borophene via physical exfoliation for CMOS-compatible P-type channel behavior

In this study, we demonstrate for the first time that multilayer beta-borophene nanosheets obtained by the physical exfoliation method can serve as CMOS-compatible p-channel semiconductors. High-resolution structural analyses confirmed the characteristic planar crystal structure of the beta-phase, along with the crystal quality and directed growth of the nanosheets. Electrical measurements revealed significant p-type conduction with carrier currents exceeding 10 mu A and channel resistances between 1.2 and 4.8 k Omega/sq, even in gate-free device configurations. This demonstrates borophene's maintained conductivity and usability for CMOS technologies. Unlike previous studies that relied on epitaxial production, achieving borophene through physical exfoliation makes a significant contribution for production scalability and integration. The results suggest that beta-borophene is a strong p-channel candidate for use in CMOS architecture in combination with n-type 2D materials in the future.