Single layer microbolometer detector pixel using ZnO material

This paper presents the development of a single layer microbolometer pixel fabricated using only ZnO material coated with atomic layer deposition. Due to the stress-free nature and high temperature coefficient of resistance of the ALD coated ZnO material, it can be used both as structural and active layers in microbolometer detectors. The design, simulations, and the fabrication optimization of 35. m single layer ZnO microbolometers are shown in this study. The designed pixel has a thermal conductance of 3.4x10(-7) W/K and a thermal time constant of 1.34 ms while it has a maximum displacement of 0.43 mu m under 1000g acceleration. This structure can be used to decrease the design complexities and fabrication costs and increase the yield of the detectors making them possible to be used in low-cost applications.