Low-Noise Amplifiers for W-Band and D-Band Passive Imaging Systems in SiGe BiCMOS Technology

In this paper, two wideband and low power mm wave LNAs implemented in a 0.13 mu m SiGe BiCMOS technology are presented. The W-band LNA has 22.3 dB peak gain, 17 GHz 3-dB bandwidth (BW) and 8 mW of power consumption whereas the D-Band LNA achieves 25.3 dB peak gain, 44 GHz 3-dB BW while consuming 30 mW of power. Input and output of the LNAs are wideband matched to 50 Omega in their respective frequency bands. Using the measured gains, the effective noise bandwidths are calculated to be 33.8 GHz for the W-band and 58.9 GHz for the D-band LNAs. Measurement results indicate that the LNAs are suitable for low power and wideband radiometer systems.