High Responsivity Power Detectors for W/D-Bands Passive Imaging Systems in 0.13 mu m SiGe BiCMOS Technology

This paper presents the design, implementation and measurement results of power detectors (PDs) operating at W-band and D-band. Two detectors are designed and fabricated in 0.13 mu m SiGe BiCMOS technology. The measured minimum NEPs are 0.43 and 4.2 pW/Hz(1/2), and the peak responsivities are 772 and 132 kV/W for the W-band and D-band power detectors, respectively. Both the PDs have wideband input matching to improve the performance over the entire bandwidth and occupy less than 0.37 mm(2) of area. The fabricated chips demonstrate the state-of-the-art responsivity performance to be utilized in W/D-bands radiometer systems.