Controlling the Intrinsic Charge Carrier Properties of Two-Dimensional Monochalcogenides (GeSe)

Strong anisotropy exhibited by materials, particularly in their low-dimensional forms, is a highly intriguing characteristic. In this study, we investigate the effects of geometrical potential and thermodynamics on the electronic properties of monolayer monochalcogenide charge carriers. First, the geometrical potential is introduced in a monolayer structure. We discuss the Fermi surface topology of materials and the effects of the geometrical potential on the low energy bands of 2D group-IV monochalcogenides around the Gamma-point. Then, the temperature dependence of the carrier mobility of the monolayer is discussed along with predictions for its potential applications as nanomaterials.