Yayınlanmış 1 Ocak 2024 | Sürüm v1
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The photodiode performances of NDI-appended ruthenium complexes

  • 1. Bingol Univ, Vocat Sch Tech Sci, Alternat Energy Sources Technol, TR-12000 Bingol, Turkiye
  • 2. Bingol Univ, Fac Sci & Arts, Dept Chem, TR-12000 Bingol, Turkiye
  • 3. Bingol Univ, Vocat Sch Food Agr & Livestock, TR-12000 Bingol, Turkiye
  • 4. Kutahya Hlth Sci Univ, Fac Engn & Nat Sci, Dept Basic Sci Engn, TR-43000 Kutahya, Turkiye
  • 5. Canakkale Onsekiz Mart Univ, Fac Sci, Dept Chem, TR-17100 Canakkale, Turkiye

Açıklama

The synthesis and investigation of photoelectric studies of simple organic compounds as organic interlayers are of significant importance and widely studied. As such, we synthesized naphthalene diimide (NDI)-appended ruthenium complexes (Ru-NDIs) to function as the interface layer, and have fabricated novel Al/NDIs or Ru-NDIs/p-Si devices (D1-D4) to investigate their photoelectric properties. Subsequently, we compared and discussed the photoelectric properties of these devices after synthesis and fabrication. According to this, the band-gap energy (E g ) values of organic materials were found to range from 2.95 eV to 3.14 eV, making them ideal for solar cells applications. Additionally, the photoresponse (Pr) values of Al/NDIs or Ru-NDIs/p-Si devices (D1-D4) were found to be 59.25, 1593.08, 198.77, and 134.47, respectively. Moreover, the Al/Ru-NDIs/p-Si D2 structure exhibited the highest Pr values. Experimental results indicate that since the four optoelectronic devices arranged with the derivation of synthesized compounds have good photoresponse characteristics, they can be utilized as a photosensor or photodiodes in different electronic and optoelectronic technologies.

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